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TOSHIBA. 2SC5200. JAPAN. Part No. (or abbreviation code) Lot No. Characteristics indicator. Note 2. Note: Printed only on devices manufactured in Japan. Note 2 : A line under a Lot No. identifies the indication of product Labels.
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Data sheet. TTC5200 Data sheet/English [Nov,2013] PDF: 191KB. Application Note. Surface Mount Small Signal Transistor (BJT) Precautions for use [Jan,2022] PDF: 732KB. Application Note. The thermal stability and thermal design:Bipolar Transistor Application Notes [Mar,2021] PDF: 525KB. Application Note.
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Brief Description of 2SC5200. The 2SC5200 is a high-power NPN bipolar junction transistor (BJT) known for its use in audio amplifier and power amplifier applications. It is part of the 2SC series of transistors and is commonly used in high-fidelity audio amplifiers and professional audio equipment. Here are some key features and specifications.
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TOSHIBA Transistor Silicon NPN Triple Diffused Type TTC5200 Power Amplifier Applications • High collector voltage: VCEO = 230 V (min) • Complementary to TTA1943 • Recommended for 100-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25°C)
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Datasheet: Description: Nell Semiconductor Co.,. TTC5200: 256Kb / 3P: Silicon NPN triple diffusion planar transistor 15A/230V/150W JILIN SINO-MICROELECTRO. TTC5200: 306Kb / 6P: Power Amplifier Applications Thinki Semiconductor Co. TTC5200: 303Kb / 2P: 150 Watt Silicon Epitaxial Planar NPN Power Transistors Toshiba Semiconductor: TTC5200.
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C5200 Datasheet (HTML) - Toshiba Semiconductor: Similar Part No. - C5200: Manufacturer: Part # Datasheet: Description: Savantic, Inc. C5200: 229Kb / 4P: Silicon NPN Power Transistors STMicroelectronics: C5200: 181Kb / 9P: High power NPN epitaxial planar bipolar transistor Fairchild Semiconductor: C5200: 62Kb / 5P: Audio Power Amplifier
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File Size: 1MbKbytes. Page: 73 Pages. Description: Bipolar Small-Signal Transistors. Manufacturer: Toshiba Semiconductor. Electronic Components Datasheet Search English Chinese: German: Japanese: Russian: Korean: Spanish. 2SC5200 Datasheet (HTML) - Toshiba Semiconductor: 2SC5200 Product details: MOS GT30F126 30F126 30A/330V IGBT TO-220F
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0.1. Size:236K toshiba. 2sc5200r 2sc5200o.pdf. 2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 230 V (min) Complementary to 2SA1943 Suitable for use in 100-W high fidelity audio amplifiers output stage Absolute Maximum Ratings (Ta = 25C) Characteristics.
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TTC5200 Datasheet (HTML) - Toshiba Semiconductor: Similar Part No. - TTC5200: Manufacturer: Part # Datasheet: Description: Nell Semiconductor Co.,. TTC5200: 256Kb / 3P: Silicon NPN triple diffusion planar transistor 15A/230V/150W JILIN SINO-MICROELECTRO. TTC5200: 306Kb / 6P: Power Amplifier Applications
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Datasheet: Description: Unisonic Technologies: 2SC5200: 94Kb / 3P: POWER AMPLIFIER APPLICATIONS ON Semiconductor: 2SC5200: 238Kb / 7P: NPN Epitaxial Silicon Transistor January 2009 Rev. C: Fairchild Semiconductor: 2SC5200: 205Kb / 6P: NPN Epitaxial Silicon Transistor Toshiba Semiconductor: 2SC5200: 1Mb / 73P: Bipolar Small-Signal Transistors.
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Datasheet: Description: Unisonic Technologies: 2SC5200: 94Kb / 3P: POWER AMPLIFIER APPLICATIONS ON Semiconductor: 2SC5200: 238Kb / 7P: NPN Epitaxial Silicon Transistor January 2009 Rev. C: Fairchild Semiconductor: 2SC5200: 205Kb / 6P: NPN Epitaxial Silicon Transistor Toshiba Semiconductor: 2SC5200: 1Mb / 73P: Bipolar Small-Signal Transistors.
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