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Piquemal-Banci, M. et al. Insulator-to-metallic spin-filtering in 2D magnetic tunnel junctions based on hexagonal boron nitride. ACS Nano 12 , 4712-4718 (2018). Article Google Scholar
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ABSTRACT: We report on the integration of atomically thin 2D insulating hexagonal boron nitride (h-BN) tunnel barriers into magnetic tunnel junctions (2D-MTJs) by fabricating two illustrative systems (Co/h-BN/Co and Co/h-BN/Fe) and by discussing h-BN potential for metallic spin filtering. The h-BN is directly grown by chemical vapor deposition on
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Maëlis Piquemal-Banci 1, Regina Galceran 1, Marie-Blandine Martin 1, Florian Godel 1,. This review focuses on the recent experimental integration of 2D materials, mostly graphene but also h-BN and dichalochogenides, such as MoS 2 and WS 2, in magnetic tunnel junctions. The main remarkable characteristic of 2D materials is the ability to.
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The fruitful potential of spin manipulation by proximity effect at the hybridized 2D material / ferromagnet interface for 2D-MTJs is introduced and it is emphasized that hybridization effects need to be taken into account to fully grasp the spin properties when 2D materials are used as ultimately thin interfaces.. Maëlis Piquemal-Banci, R.
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Two-dimensional (2D) materials have brought fresh prospects for spintronics, as evidenced by the rapid scientific progress made in this frontier over the past decade. In particular, for charge perpendicular to plane vertical magnetic tunnel junctions, the 2D crystals present exclusive features such as atomic-level thickness control, near.
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Abstract. We report on the integration of atomically thin 2D insulating hexagonal boron nitride (h-BN) tunnel barriers into magnetic tunnel junctions (2D-MTJs) by fabricating two illustrative systems (Co/h-BN/Co and Co/h-BN/Fe) and by discussing h-BN potential for metallic spin filtering. The h-BN is directly grown by chemical vapor deposition.
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DOI: 10.1063/1.4943516 Corpus ID: 49221181; Magnetic tunnel junctions with monolayer hexagonal boron nitride tunnel barriers @article{PiquemalBanci2016MagneticTJ, title={Magnetic tunnel junctions with monolayer hexagonal boron nitride tunnel barriers}, author={Ma{\"e}lis Piquemal-Banci and Regina Galceran and Sabina Caneva and Marie‐Blandine Martin and Robert S. Weatherup and Piran R.
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Recently, in collaboration with the CNRS - Thales-group (France) and the University of Cambridge (UK), we report on the integration of atomically thin 2D insulating hexagonal boron nitride (h-BN) tunnel barriers into magnetic tunnel junctions (2D-MTJs) by fabricating two illustrative systems (Co/h-BN/Co and Co/h-BN/Fe) and by discussing h-BN potential for metallic spin
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Piquemal-Banci, M. et al. Insulator-to-metallic spin-filtering in 2D-magnetic tunnel junctions based on hexagonal boron nitride. ACS Nano 12 , 4712-4718 (2018). Article CAS PubMed Google Scholar
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The integration of atomically thin 2D insulating hexagonal boron nitride (h-BN) tunnel barriers into magnetic tunnel junctions (2D-MTJs) by fabricating two illustrative systems and discussing h-BN potential for metallic spin filtering are reported.. lis Piquemal-Banci and Regina Galceran and Florian Godel and Sabina Caneva and Marie.
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The higher-order structure (HOS) of protein therapeutics has been confirmed as a critical quality parameter. In this study, we compared 2D 1 H-13 C ALSOFAST-HMQC NMR spectra with immunochemical ELISA-based analysis to evaluate their sensitivity in assessing the HOS of a potent human monoclonal antibody (mAb) for the treatment of coronavirus disease 2019 (COVID-19).
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We report on spin transport in state-of-the-art epitaxial monolayer graphene based 2D-magnetic tunnel junctions (2D-MTJs). In our measurements, supported by ab-initio calculations, the strength of interaction between ferromagnetic electrodes and graphene monolayers is shown to fundamentally control the resulting spin signal.